24 GHz CMOS Frequency Source with Differential Colpitts Structure-Based Complementary VCO for Low Phase Noise

被引:0
作者
Choi, Sung-Sun [1 ]
Yu, Han-Yeol [1 ]
Kim, Yong-Hoon [1 ]
机构
[1] Gwangju Inst Sci & Technol, Sch Informat & Mechatron, Kwangju 500712, South Korea
来源
IEICE TRANSACTIONS ON ELECTRONICS | 2011年 / E94C卷 / 05期
关键词
complementary VCO; frequency doubler; g(m)-boosted nMOS differential Colpitts pair; low phase noise; resistor current sources;
D O I
10.1587/transele.E94.C.909
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, a 24 GHz frequency source for low phase noise is presented in a 0.18 mu m CMOS process. The 24 GHz frequency source chip is composed of a 12 GHz voltage controlled oscillator (VCO) and a 24 GHz balanced frequency doubler with class B gate bias. Compared to a conventional complementary VCO, the proposed 12 GHz VCO has phase noise improvement by using resistor current sources and substituting the nMOS cross-coupled pair in the conventional complementary VCO for a g(m)-boosted nMOS differential Colpitts pair. The measured phase noise and fundamental frequency suppression are -107.17 dBc/Hz at a 1 MHz offset frequency and -20.95 dB at 23.19 GHz frequency, respectively. The measured frequency tuning range is from 23.19 GHz to 24.76 GHz drawing 2.72 mA at a supply voltage of 1.8 V not including an output buffer.
引用
收藏
页码:909 / 912
页数:4
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