共 19 条
[2]
BAUERKUGELMANN W, 1997, MATER SCI FORUM, V225, P662
[3]
ON THE SENSITIVITY OF POSITRONS TO ELECTRIC-FIELDS AND DEFECTS IN MBE-GROWN SILICON STRUCTURES
[J].
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,
1994, 58 (04)
:389-393
[5]
Canter K. F., 1987, Atomic Physics with Positrons. Proceedings of a NATO Advanced Research Workshop, P153
[6]
Vacancy defects in low-temperature-grown GaAs observed by continuous and pulsed slow positrons
[J].
POSITRON ANNIHILATION: ICPA-11 - PROCEEDINGS OF THE 11TH INTERNATIONAL CONFERENCE ON POSITRON ANNIHILATION, KANSAS CITY, MISSOURI, USA, MAY 1997,
1997, 255-2
:204-208
[8]
KRAUSEREHBERG R, 1998, POSITRON ANNIHILATIO, P279