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- [2] BAUERKUGELMANN W, 1997, MATER SCI FORUM, V225, P662
- [3] ON THE SENSITIVITY OF POSITRONS TO ELECTRIC-FIELDS AND DEFECTS IN MBE-GROWN SILICON STRUCTURES [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1994, 58 (04): : 389 - 393
- [5] Canter K. F., 1987, Atomic Physics with Positrons. Proceedings of a NATO Advanced Research Workshop, P153
- [6] Vacancy defects in low-temperature-grown GaAs observed by continuous and pulsed slow positrons [J]. POSITRON ANNIHILATION: ICPA-11 - PROCEEDINGS OF THE 11TH INTERNATIONAL CONFERENCE ON POSITRON ANNIHILATION, KANSAS CITY, MISSOURI, USA, MAY 1997, 1997, 255-2 : 204 - 208
- [8] KRAUSEREHBERG R, 1998, POSITRON ANNIHILATIO, P279