An application of the apertureless scanning near-field optical microscopy: imaging a GaAlAs laser diode in operation

被引：18

作者：

Bachelot, R ^{[1
]}

Wurtz, G ^{[1
]}

Royer, P ^{[1
]}

机构：

[1] Univ Technol Troyes, Lab Nanotechnol & Instrumentat Opt, F-10010 Troyes, France

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 23期

关键词：

D O I：

10.1063/1.122760

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The imaging of a commercial GaAlAs semiconductor laser emitting at 0.78 mu m has been performed by apertureless scanning near-field optical microscopy using a sharp metallic tip. This tip was used as an optical and force probe simultaneously. In stimulated emission, we observed the single transverse laser mode whose dimensions are in good agreement with theoretical results. In spontaneous emission, an optical contrast linked to the known laser layers structure was observed. (C) 1998 American Institute of Physics. [S0003-6951(98)02349-3].

引用

页码：3333 / 3335

页数：3

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