Impurity photovoltaic effect in silicon solar cell doped with sulphur: A numerical simulation

被引：17
作者：
Azzouzi, Ghania [1 ]
Chegaar, Mohamed [1 ]
机构：
[1] Ferhat Abbas Univ, Dept Phys, Setif 19000, Algeria
来源：
PHYSICA B-CONDENSED MATTER | 2011年 / 406卷 / 09期
关键词：
Impurity photovoltaic effect; Silicon solar cell performances; SCAPS simulator; EFFICIENCY; SEMICONDUCTORS; CENTERS; UNITY;
D O I：
10.1016/j.physb.2011.02.025
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The impurity photovoltaic effect (IPV) has mostly been studied in various semiconductors such as silicon, silicon carbide and GaAs in order to increase infrared absorption and hence cell efficiency. In this work, sulphur is used as the IPV effect impurity incorporated in silicon solar cells. For our simulation we use the numerical device simulator (SCAPS). We calculate the solar cell performances (short circuit current density J(sc), open circuit voltage V(oc), conversion efficiency eta and quantum efficiency QE). We study the influence of light trapping and certain impurity parameters like impurity concentration and position in the gap on the solar cell performances. Simulation results for IPV effect on silicon doped with sulphur show an improvement of the short circuit current and the efficiency for sulphur energy levels located far from the middle of the band gap especially at E(c)-E(t)=0.18 eV. (C) 2011 Elsevier B.V. All rights reserved.
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收藏
页码：1773 / 1777
页数：5
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