Deep levels in high-temperature 1 MeV electron-irradiated n-type Czochralski silicon

This work describes the radiation defects formed in high-temperature (450degreesC) 1 MeV electron-irradiated n-type Czochralski (Cz) silicon. A dedicated irradiation configuration has been used, which relies on sample heating by the energy deposited by the electron beam current. It is shown that the vacancy oxygen (VO) or A center is the dominant radiation defect under these circumstances. In addition, a whole series of unknown deep electron traps is reported, whose trap parameters (activation energy, electron capture cross section) depend, among other factors, on the starting interstitial oxygen concentration. It is speculated that their origin is related to complexes of oxygen and vacancies.