Room temperature ferromagnetism in transparent Fe-doped In2O3 films

被引：38

作者：

Kim, H. ^{[1
]}

Osofsky, M. ^{[1
]}

Miller, M. M. ^{[1
]}

Qadri, S. B. ^{[1
]}

Auyeung, R. C. Y. ^{[1
]}

Pique, A. ^{[1
]}

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 03期

关键词：

INDIUM-TIN-OXIDE; LIGHT-EMITTING DEVICES; THIN-FILMS; (IN1-XFEX)(2)O3-SIGMA; SEMICONDUCTOR;

D O I：

10.1063/1.3678038

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Fe-doped In2O3 thin films were deposited on MgO substrates by pulsed laser deposition (PLD). The linear decrease in lattice constant with increasing Fe concentration of up to 18% suggests the incorporation of Fe atoms into In2O3 lattice matrix. The PLD grown films exhibited ferromagnetism at room temperature with a strong magnetic anisotropy. The observed anomalous Hall effect (AHE) indicates that spin polarized charge carriers play an important role in the origin of ferromagnetism in these oxides. Our observations, including AHE, magnetic anisotropy, and structural analysis provide strong evidence of intrinsic ferromagnetism at room temperature in these materials. [doi:10.1063/1.3678038]

引用

页数：3

共 19 条

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