Room temperature ferromagnetism in transparent Fe-doped In2O3 films

被引：38
作者：
Kim, H. [1 ]
Osofsky, M. [1 ]
Miller, M. M. [1 ]
Qadri, S. B. [1 ]
Auyeung, R. C. Y. [1 ]
Pique, A. [1 ]
机构：
[1] USN, Res Lab, Washington, DC 20375 USA
来源：
APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 03期
关键词：
INDIUM-TIN-OXIDE; LIGHT-EMITTING DEVICES; THIN-FILMS; (IN1-XFEX)(2)O3-SIGMA; SEMICONDUCTOR;
D O I：
10.1063/1.3678038
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Fe-doped In2O3 thin films were deposited on MgO substrates by pulsed laser deposition (PLD). The linear decrease in lattice constant with increasing Fe concentration of up to 18% suggests the incorporation of Fe atoms into In2O3 lattice matrix. The PLD grown films exhibited ferromagnetism at room temperature with a strong magnetic anisotropy. The observed anomalous Hall effect (AHE) indicates that spin polarized charge carriers play an important role in the origin of ferromagnetism in these oxides. Our observations, including AHE, magnetic anisotropy, and structural analysis provide strong evidence of intrinsic ferromagnetism at room temperature in these materials. [doi:10.1063/1.3678038]
引用
收藏
页数：3
相关论文
共 19 条
  • [1] Two magnetic regimes in doped ZnO corresponding to a dilute magnetic semiconductor and a dilute magnetic insulator
    Behan, A. J.
    Mokhtari, A.
    Blythe, H. J.
    Score, D.
    Xu, X-H.
    Neal, J. R.
    Fox, A. M.
    Gehring, G. A.
    [J]. PHYSICAL REVIEW LETTERS, 2008, 100 (04)
  • [2] VEGARD LAW
    DENTON, AR
    ASHCROFT, NW
    [J]. PHYSICAL REVIEW A, 1991, 43 (06): : 3161 - 3164
  • [3] Magnetostriction effects of 3d4 and 3d6 ions in dilute magnetic oxide films
    Dionne, Gerald F.
    Kim, Hyun-Suk
    [J]. JOURNAL OF APPLIED PHYSICS, 2008, 103 (07)
  • [4] Magnetism in dilute magnetic oxide thin films based on SnO2
    Fitzgerald, C. B.
    Venkatesan, M.
    Dorneles, L. S.
    Gunning, R.
    Stamenov, P.
    Coey, J. M. D.
    Stampe, P. A.
    Kennedy, R. J.
    Moreira, E. C.
    Sias, U. S.
    [J]. PHYSICAL REVIEW B, 2006, 74 (11)
  • [5] Room temperature ferromagnetic n-type semiconductor in (In1-xFex)2O3-σ -: art. no. 052503
    He, J
    Xu, SF
    Yoo, YK
    Xue, QZ
    Lee, HC
    Cheng, SF
    Xiang, XD
    Dionne, GF
    Takeuchi, I
    [J]. APPLIED PHYSICS LETTERS, 2005, 86 (05) : 1 - 3
  • [6] Electrical, optical, and structural properties of indium-tin-oxide thin films for organic light-emitting devices
    Kim, H
    Gilmore, CM
    Piqué, A
    Horwitz, JS
    Mattoussi, H
    Murata, H
    Kafafi, ZH
    Chrisey, DB
    [J]. JOURNAL OF APPLIED PHYSICS, 1999, 86 (11) : 6451 - 6461
  • [7] Indium tin oxide thin films for organic light-emitting devices
    Kim, H
    Piqué, A
    Horwitz, JS
    Mattoussi, H
    Murata, H
    Kafafi, ZH
    Chrisey, DB
    [J]. APPLIED PHYSICS LETTERS, 1999, 74 (23) : 3444 - 3446
  • [8] Transparent conducting Zr-doped In2O3 thin films for organic light-emitting diodes
    Kim, H
    Horwitz, JS
    Kushto, GP
    Qadri, SB
    Kafafi, ZH
    Chrisey, DB
    [J]. APPLIED PHYSICS LETTERS, 2001, 78 (08) : 1050 - 1052
  • [9] Magnetic behavior of Fe doped In2O3
    Kohiki, S
    Murakawa, Y
    Hori, K
    Shimooka, H
    Tajiri, T
    Deguchi, H
    Oku, M
    Arai, M
    Mitome, M
    Bando, Y
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (28-32): : L979 - L981
  • [10] Ferromagnetism in transparent thin films of Fe-doped indium tin oxide
    Ohno, Takahiro
    Kawahara, Toshio
    Tanaka, Hidekazu
    Kawai, Tomoji
    Oku, Masaoki
    Okada, Koichi
    Kohiki, Shigemi
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2006, 45 (33-36): : L957 - L959
12