Cadmium trapping by C60 and B-, Si-, and N-doped C60

被引:7
|
作者
Kuganathan, Navaratnarajah [1 ]
Selvanantharajah, Namasivayam [2 ]
Iyngaran, Poobalasuntharam [2 ]
Abiman, Poobalasingam [2 ]
Chroneos, Alexander [1 ,3 ]
机构
[1] Imperial Coll London, Dept Mat, London SW7 2AZ, England
[2] Univ Jaffna, Dept Chem, Sir Pon Ramanathan Rd, Thirunelvely, Jaffna, Sri Lanka
[3] Coventry Univ, Fac Engn Environm & Comp, Priory St, Coventry CV1 5FB, W Midlands, England
关键词
ELECTRONIC-PROPERTIES; CARBON NANOTUBES; FULLERENE; ADSORPTION; ENCAPSULATION; SEPARATION; COMPLEXES; ATOMS;
D O I
10.1063/1.5080351
中图分类号
O59 [应用物理学];
学科分类号
摘要
The removal of heavy metals from the environment has attracted considerable attention as they are toxic and non-biodegradable or destroyable. To minimize their hazard, they should be removed through either physical or chemical capture. Cadmium is a heavy metal that can lead to severe risks to human health. Using the density functional theory with a dispersion correction (DFT + D), we predict the structures and energies of Cd trapped by C-60. Furthermore, we substitutionally doped C-60 with a single B, Si, and N and examined its trapping behavior. The lowest substitutional energy was calculated for B. Significant enhancement in trapping is observed with B and Si doping outside the surface in particular and our results warrant further experimental investigation.
引用
收藏
页数:9
相关论文
共 50 条
  • [1] 'Nitrogen doped' C60 dimers (N@C60-C60)
    Goedde, B
    Waiblinger, M
    Jakes, P
    Weiden, N
    Dinse, KP
    Weidinger, A
    CHEMICAL PHYSICS LETTERS, 2001, 334 (1-3) : 12 - 17
  • [2] The structure of C60 and endohedral C60 on the Si{100} surface
    Godwin, PD
    Kenny, SD
    Smith, R
    Belbruno, J
    SURFACE SCIENCE, 2001, 490 (03) : 409 - 414
  • [3] B-, N-doped and BN codoped C60 heterofullerenes for environmental monitoring of NO and NO2: a DFT study
    Esrafili, Mehdi D.
    Janebi, Hossein
    MOLECULAR PHYSICS, 2020, 118 (05)
  • [4] Ionized impurity scattering in n-doped C60 thin films
    Harada, Kentaro
    Li, Fenghong
    Maennig, Bert
    Pfeiffer, Martin
    Leo, Karl
    APPLIED PHYSICS LETTERS, 2007, 91 (09)
  • [5] Growth and characterization of C60/GaAs interfaces and C60 doped GaAs
    Nishinaga, Jiro
    Horikoshi, Yoshiji
    JOURNAL OF CRYSTAL GROWTH, 2011, 323 (01) : 135 - 139
  • [6] Si60, an analogue of C60?
    Zybill, C.
    Angewandte Chemie (International Edition in English), 1992, 31 (02):
  • [7] Tuning conductance in C60 devices: defective C60 and endohedral C60 complex
    Li, Guiqin
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2015, 118 (02): : 473 - 477
  • [8] Tuning conductance in C60 devices: defective C60 and endohedral C60 complex
    Guiqin Li
    Applied Physics A, 2015, 118 : 473 - 477
  • [9] Modification of N-doped carbon induced by 30 MeV C60 ions
    Wang, ZG
    Dunlop, A
    Zhao, ZM
    Song, Y
    Jin, YF
    Zhang, CH
    Sun, YM
    Liu, J
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2005, 230 : 262 - 268
  • [10] Adsorption behavior of 5-fluorouracil on pristine, B-, Si-, and Al-doped C60 fullerenes: A first-principles study
    Hazrati, Mehrnoosh Khodam
    Hadipour, Nasser L.
    PHYSICS LETTERS A, 2016, 380 (7-8) : 937 - 941