A study on the conduction path in undoped polycrystalline diamond films

被引：22
作者：
Lee, BJ
Ahn, BT
Lee, JK
Baik, YJ
机构：
[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Yusung Gu, Taejon 305701, South Korea
[2] Korea Inst Sci & Technol, Thin Film Technol Res Ctr, Seoul 130650, South Korea
来源：
DIAMOND AND RELATED MATERIALS | 2001年 / 10卷 / 12期
关键词：
undoped polycrystalline diamond films conduction path; impedance spectroscopy; electroplating; electroetching;
D O I：
10.1016/S0925-9635(01)00503-9
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The conduction path in as-grown undoped diamond films deposited by chemical vapor deposition has been investigated by employing impedance spectroscopy, electroplating and electroetching. The thickness- and direction-dependencies of electrical resistivity did not agree with the previously known surface conduction model. The Cu electroplating and Ag electroetching results showed that the current path followed the grain boundaries within the diamond films. The Cu electroplating of diamond film with an insulating surface layer also showed that the grain boundaries within the films were the main conduction path in undoped polycrystalline films. (C) 2001 Elsevier Science B.V. All rights reserved.
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收藏
页码：2174 / 2177
页数：4
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