Optical characterization of indium-tin-oxynitride fabricated by RF-sputtering

被引：11

作者：

Aperathitis, E

Modreanu, M

Bender, M

Cimalla, V

Ecke, G

Androulidaki, M

Pelekanos, N

机构：

[1] Fdn Res & Technol Hellas, Microelect Res Grp, Inst Elect Struct & Laser, Iraklion, Crete, Greece

[2] Natl Univ Ireland Univ Coll Cork, Natl Microelect Res Ctr, Photon Grp, Cork, Ireland

[3] Appl Films GMBH & Co KG, D-63755 Alzenau, Germany

[4] Tech Univ Ilmenau, Ctr Micro & Nanotechnol, ZMN, D-98684 Ilmenau, Germany

来源：

THIN SOLID FILMS | 2004年 / 450卷 / 01期

关键词：

indium tin oxide; nitrides; sputtering; optical properties; structural properties; conductivity;

D O I：

10.1016/j.tsf.2003.10.046

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Indium-tin-oxynitride (ITON) and indium-tin-oxide (ITO) thin films have been fabricated by r.f. sputtering from an indium-tin-oxide target in a plasma containing N-2 and Ar gases, respectively. The properties of films grown at two different plasma pressures were examined just after deposition and after annealing. Although the electrical properties of these films were improved after annealing, the properties of the ITON films were still inferior to those of the ITO films. The resistivity of the ITON films after annealing was reduced by a factor of two for the film at the higher plasma pressure, but the carrier concentration was almost the same. The ITON films fabricated at low pressure exhibited a significant blue shift in transmittance, which was not related to the increase carrier concentration after annealing. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：101 / 104

页数：4

共 14 条

[11] MECHANISMS OF REACTIVE SPUTTERING OF INDIUM .1. GROWTH OF INN IN MIXED AR-N2 DISCHARGES [J].