Direct growth of large grain polycrystalline silicon films on aluminum-induced crystallization seed layer using hot-wire chemical vapor deposition

被引：23
|
作者：
Wu, Bing-Rui [1 ]
Lo, Shih-Yung [1 ]
Wuu, Dong-Sing [1 ,2 ]
Ou, Sin-Liang [1 ]
Mao, Hsin-Yuan [1 ]
Wang, Jui-Hao [1 ]
Horng, Ray-Hua [3 ]
机构：
[1] Natl Chung Hsing Univ, Dept Mat Sci & Engn, Taichung 40227, Taiwan
[2] Da Yeh Univ, Dept Elect Engn, Changhua 51591, Taiwan
[3] Natl Chung Hsing Univ, Grad Inst Precis Engn, Taichung 40227, Taiwan
来源：
THIN SOLID FILMS | 2012年 / 520卷 / 18期
关键词：
Grain size; Polycrystalline Si; Aluminum-induced crystallization; Seed layer; Hot-wire chemical vapor deposition; Raman spectroscopy; Electron microscopy; AMORPHOUS-SILICON; PHASE EPITAXY; SOLAR-CELLS; SI FILMS; GLASS; QUALITY;
D O I：
10.1016/j.tsf.2012.05.009
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Large grain polycrystalline silicon (poly-Si) films on glass substrates have been deposited on an aluminum-induced crystallization (AIC) seed layer using hot-wire chemical vapor deposition (HWCVD). A poly-Si seed layer was first formed by the AIC process and a thicker poly-Si film was subsequently deposited upon the seed layer using HWCVD. The effects of AIC annealing parameters on the structural and electrical properties of the poly-Si seed layers were characterized by Raman scattering spectroscopy, field-emission scanning electron microscopy, and Hall measurements. It was found that the crystallinity of seed layer was enhanced with increasing the annealing duration and temperature. The poly-Si seed layer formed at optimum annealing parameters can reach a grain size of 700 nm, hole concentration of 3.5x10(18) cm(-3), and Hall mobility of 22 cm(2)/Vs. After forming the seed layer, poly-Si films with good crystalline quality and high growth rate (>1 nm/s) can be obtained using HWCVD. These results indicated that the HWCVD-deposited poly-Si film on an AIC seed layer could be a promising candidate for thin-film Si photovoltaic applications. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码：5860 / 5866
页数：7
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