Direct growth of large grain polycrystalline silicon films on aluminum-induced crystallization seed layer using hot-wire chemical vapor deposition

被引：23

作者：

Wu, Bing-Rui ^{[1
]}

Lo, Shih-Yung ^{[1
]}

Wuu, Dong-Sing ^{[1
,2
]}

Ou, Sin-Liang ^{[1
]}

Mao, Hsin-Yuan ^{[1
]}

Wang, Jui-Hao ^{[1
]}

Horng, Ray-Hua ^{[3
]}

机构：

[1] Natl Chung Hsing Univ, Dept Mat Sci & Engn, Taichung 40227, Taiwan

[2] Da Yeh Univ, Dept Elect Engn, Changhua 51591, Taiwan

[3] Natl Chung Hsing Univ, Grad Inst Precis Engn, Taichung 40227, Taiwan

来源：

THIN SOLID FILMS | 2012年 / 520卷 / 18期

关键词：

Grain size; Polycrystalline Si; Aluminum-induced crystallization; Seed layer; Hot-wire chemical vapor deposition; Raman spectroscopy; Electron microscopy; AMORPHOUS-SILICON; PHASE EPITAXY; SOLAR-CELLS; SI FILMS; GLASS; QUALITY;

D O I：

10.1016/j.tsf.2012.05.009

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Large grain polycrystalline silicon (poly-Si) films on glass substrates have been deposited on an aluminum-induced crystallization (AIC) seed layer using hot-wire chemical vapor deposition (HWCVD). A poly-Si seed layer was first formed by the AIC process and a thicker poly-Si film was subsequently deposited upon the seed layer using HWCVD. The effects of AIC annealing parameters on the structural and electrical properties of the poly-Si seed layers were characterized by Raman scattering spectroscopy, field-emission scanning electron microscopy, and Hall measurements. It was found that the crystallinity of seed layer was enhanced with increasing the annealing duration and temperature. The poly-Si seed layer formed at optimum annealing parameters can reach a grain size of 700 nm, hole concentration of 3.5x10(18) cm(-3), and Hall mobility of 22 cm(2)/Vs. After forming the seed layer, poly-Si films with good crystalline quality and high growth rate (>1 nm/s) can be obtained using HWCVD. These results indicated that the HWCVD-deposited poly-Si film on an AIC seed layer could be a promising candidate for thin-film Si photovoltaic applications. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：5860 / 5866

页数：7

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