A micromachined silicon flexure for tunable external cavity diode laser
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作者:
Chuang, Ho-Chiao
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机构:
Univ Colorado, Dept Mech Engn, Boulder, CO 80309 USAUniv Colorado, Dept Mech Engn, Boulder, CO 80309 USA
Chuang, Ho-Chiao
[1
]
Jimenez-Martinez, Ricardo
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机构:Univ Colorado, Dept Mech Engn, Boulder, CO 80309 USA
Jimenez-Martinez, Ricardo
Braun, Simon
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机构:Univ Colorado, Dept Mech Engn, Boulder, CO 80309 USA
Braun, Simon
Anderson, Dana Z.
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机构:Univ Colorado, Dept Mech Engn, Boulder, CO 80309 USA
Anderson, Dana Z.
Bright, Victor M.
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机构:
Univ Colorado, Dept Mech Engn, Boulder, CO 80309 USAUniv Colorado, Dept Mech Engn, Boulder, CO 80309 USA
Bright, Victor M.
[1
]
机构:
[1] Univ Colorado, Dept Mech Engn, Boulder, CO 80309 USA
来源:
INTERNATIONAL MECHANICAL ENGINEERING CONGRESS AND EXPOSITION 2007, VOL 11 PT A AND PT B: MICRO AND NANO SYSTEMS
|
2008年
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中图分类号:
TH [机械、仪表工业];
学科分类号:
0802 ;
摘要:
We present a novel external cavity diode laser design developed for atomic physics which employs a micromachined silicon flexure to sweep the laser frequency and a volume holographic reflection grating (VHG) to provide the optical feedback. The advantages of using a silicon flexure are its simple micro fabrication process and reduction of the overall size of the laser system. The results demonstrate an optimized threshold current reduction from 59mA to 43mA, a frequency sweeping range of 2.069 GHz, and Rb-87, Rb-85 (Rubidium) D-2 line absorption at 780 nm.