Alleviating defects in perovskites using single-walled carbon nanotubes

被引：3

作者：

Choi, Jin-Myung ^{[1
]}

Han, Jiye ^{[1
]}

Rane, Tushar ^{[2
]}

Kim, Soyeon ^{[1
,3
]}

Kim, Ick Soo ^{[4
]}

Jeon, Il ^{[1
,4
]}

机构：

[1] Sungkyunkwan Univ SKKU, Dept Nano Engn, SKKU Adv Inst Nanotechnol ST, Suwon 16419, South Korea

[2] Shivaji Univ, Sch Nanosci & Technol, Kolhapur 416004, Maharashtra, India

[3] Tohoku Univ, Grad Sch Engn, Aoba Ku, 6-6-11 Aramaki Aza Aoba, Sendai, Miyagi 9808579, Japan

[4] Shinshu Univ, Nano Fus Technol Res Grp, Inst Fiber Engn IFES, Interdisciplinary Cluster Cutting Edge Res ICCER, Tokida 3-15-1, Ueda, Nagano 3868567, Japan

来源：

JOURNAL OF PHYSICS-ENERGY | 2022年 / 4卷 / 04期

基金：

新加坡国家研究基金会;

关键词：

carbon nanotubes; single-walled carbon nanotubes; multi-walled carbon nanotubes; semiconducting carbon nanotubes; perovskite solar cells; SOLAR-CELLS; ELECTRONIC-STRUCTURE; CRYSTAL-GROWTH; PERFORMANCE; EFFICIENCY; LAYERS; RECOMBINATION; COMPOSITES; EXTRACTION; SEPARATION;

D O I：

10.1088/2515-7655/ac91f7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Single-walled carbon nanotubes (SWCNTs) are representative one-dimensional materials that show exceptional optical and electronic properties with various tuneable bandgaps. SWCNTs can be integrated into a variety of photovoltaics particularly, perovskite solar cells (PSCs) based on a high level of functionality and purity. In this topical review, we discuss the fundamentals of SWCNTs applied to PSCs as an electron-transporting layer, hole-transporting layer, photoactive layer, and interfacial materials from the literature. Firstly, SWCNTs in PSCs and their defect control properties improving the devices are discussed. Subsequently, electrical and morphological improvement of semiconducting SWCNT added PSCs and other types of CNTs used in PSCs are discussed chronologically. The review and discussion layout the strategies of incorporating SWCNTs within the design frame of next-generation PSCs towards the improvement of the device performance via defect passivation.

引用

页数：14

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