Nanometer scale complementary silicon MOSFETs as detectors of terahertz and sub-terahertz radiation

We demonstrate, for the first time, THz detection by Si CMOS, ie. by both p-channel and n-channel Si MOS devices. Previous work demonstrated that Si n-MOS devices detect THz and sub-THz radiation via the excitation of plasma waves in the device channel, with responsivity and Noise Equivalent Power on the order of commercial pyroelectric detectors but capable of operating at much greater speed as shown by a theory of temporal response predicting the maximum operating frequency. The CMOS responsivity is a strong increasing function of the drain current. Our experimental data and modeling results allow us to understand the effects of device geometry and bias on the Si CMOS THz detector performance.