Electrical Characteristics of Pt Schottky Contacts Fabricated on Amorphous Gallium Indium Zinc Oxides

被引：23
|
作者：
Kim, Hyunsoo [1 ]
Kim, Seongjun [1 ]
Kim, Kyoung-Kook [2 ]
Lee, Sung-Nam [2 ]
Ahn, Kwang-Soon [3 ]
机构：
[1] Chonbuk Natl Univ, Semicond Phys Res Ctr, Sch Semicond & Chem Engn, Jeonju 561756, Chonbuk, South Korea
[2] Korea Polytech Univ, Dept Nanoopt Engn, Shihung 429793, Gyeonggi, South Korea
[3] Yeungnam Univ, Sch Chem Engn, Kyongsan 712749, Gyeongbuk, South Korea
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2011年 / 50卷 / 10期
基金：
新加坡国家研究基金会;
关键词：
THIN-FILM TRANSISTORS; CURRENT-VOLTAGE CHARACTERISTICS; GA-ZN-O; INTERSECTING BEHAVIOR; CARRIER TRANSPORT; SEMICONDUCTOR; DIODES; ELECTRODES; RESISTANCE;
D O I：
10.1143/JJAP.50.105702
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The electrical characteristics of Pt Schottky diodes fabricated on amorphous gallium indium zinc oxide were investigated. On the basis of Schottky theory with the thermionic emission mode, an effective Schottky barrier height (SBH) of 0.55 eV and an ideality factor of 3.38 were obtained. The anomalously high ideality factor could be attributed to the statistical potential variations of conduction band edges, as evidenced from the distinctive carrier transport through percolation hopping conduction. In this respect, the barrier inhomogeneity model was applied to obtain reasonable Schottky parameters, yielding the mean barrier height of 1.23 eV with a large standard deviation of 192 mV. (C) 2011 The Japan Society of Applied Physics
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页数：3
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