Perpendicular magnetic anisotropy of Mn4N films fabricated by reactive sputtering method

被引：54

作者：

Kabara, Kazuki ^{[1
]}

Tsunoda, Masakiyo ^{[1
]}

机构：

[1] Tohoku Univ, Grad Sch Engn, Dept Elect Engn, Sendai, Miyagi 9808579, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2015年 / 117卷 / 17期

基金：

日本学术振兴会;

关键词：

NITROGEN;

D O I：

10.1063/1.4913730

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Manganese nitride films were fabricated on MgO substrates by changing N-2 flow ratio into Ar gas (P-N2) during reactive sputtering deposition of the films, and their crystal structures and magnetic properties were investigated. Single phased epsilon-Mn4N films were obtained when P-N2 was 5%-9%, and the tetragonal lattice distortion was identified in all the Mn4N films (the lattice constant ratio, c/a = 0.99). Perpendicular magnetic anisotropy was observed in all the specimens. The Mn4N film, fabricated with P-N2 = 8%, has a low saturation magnetization (M-s = 110 emu/cc) and relatively high magnetic anisotropic energy (K-u = 8.8 x 10(5) erg/cc). Both M-s and K-u of the films drastically changed with mixing other phases (alpha-Mn, beta-Mn, eta-Mn3N2, and possibly gamma-Mn) by varying P-N2. (c) 2015 AIP Publishing LLC.

引用

页数：4

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