Thermally induced nonlinearities in high-speed p-i-n photodetectors

被引：23
|
作者：
Stievater, TH [1 ]
Williams, KJ [1 ]
机构：
[1] USN, Res Lab, Washington, DC 20375 USA
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2004年 / 16卷 / 01期
关键词：
InGaAs; nonlinearities; photodetectors; p-i-n photodiodes;
D O I：
10.1109/LPT.2003.819369
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Nonlinearities in the responsivity of high-speed p-i-n photodetectors at high photocurrents can limit the useful dynamic range in photonic systems. This letter describes a nonlinearity in the quantum efficiency in InGaAs photodetectors designed for applications at 1.5 mum is due to significant ohmic heating of the intrinsic region. Measured changes in responsivity of about 10% at photocurrents of 12 mA are attributed to a thermal bandgap shift, based on comparisons with temperature dependent measurements and a model of ohmic heating.
引用
收藏
页码：239 / 241
页数：3
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