Negative photoconductivity in In0.52Al0.48As/In0.7Ga0.3As heterostructures

被引：8

作者：

Akazaki, Tatsushi ^{[1
]}

Yamaguchi, Masumi ^{[1
]}

Tsumura, Kouhei ^{[2
]}

Nomura, Shintaro ^{[1
,2
]}

Takayanagi, Hideaki ^{[3
]}

机构：

[1] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

[2] Univ Tsukuba, Tsukuba, Ibaraki 3058571, Japan

[3] Tokyo Univ Sci, Tokyo 1628601, Japan

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2008年 / 40卷 / 05期

关键词：

negative photoconductivity; InAlAs/InGaAs heterostructure; infrared laser; deep level;

D O I：

10.1016/j.physe.2007.09.004

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We investigated the transport of a two-dimensional electron gas (2DEG) in an In0.52Al0.48As/In0.7Ga0.3As heterostructure when exposed to light from infrared laser diodes (lambda = 0.78, 1.3 mu m) by means of both Shubnikov-de Haas and Hall-effect measurements. We observed negative photoconductivity due to a reduction in the number of electrons in the 2DEG when they were illuminated by photons at lambda = 1.3 mu m. We speculate that the negative photoconductivity originates from the diffusion and trapping of photo-induced hot electrons at deep impurity levels in the InAlAs barrier layer near the InAlAs/InGaAs interface. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：1341 / 1343

页数：3

共 5 条

[1] Photoconductivity of InSb/GaAs heterostructures at low temperature [J].

Beaulieu, Y ;

Webb, JB ;

Brebner, JL .

JOURNAL OF APPLIED PHYSICS, 1996, 79 (03) :1772-1778

[2] PHOTOCONDUCTIVITY IN ALSB/INAS QUANTUM-WELLS [J].

GAUER, C ;

SCRIBA, J ;

WIXFORTH, A ;

KOTTHAUS, JP ;

NGUYEN, C ;

TUTTLE, G ;

ENGLISH, JH ;

KROEMER, H .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (01) :S137-S140

[3] CHARACTERIZATION OF DEEP LEVELS IN SI-DOPED INXAL1-XAS LAYERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

MALININ, A ;

TOMOZAWA, H ;

HASHIZUME, T ;

HASEGAWA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (2B) :1138-1142

[4]

Nitta J, 1997, PHYS REV LETT, V78, P1335, DOI 10.1103/PhysRevLett.78.1335

[5] Large negative persistent photoconductivity in InAs/AlSb quantum wells [J].

Sadofyev, YG ;

Ramamoorthy, A ;

Bird, JP ;

Johnson, SR ;

Zhang, YH .

APPLIED PHYSICS LETTERS, 2005, 86 (19) :1-3

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