A new di/dt control gate drive circuit for IGBTs to reduce EMI noise and switching losses

被引：0

作者：

Takizawa, S ^{[1
]}

Igarashi, S ^{[1
]}

Kuroki, K ^{[1
]}

机构：

[1] Fuji Elect Corp Res & Dev Ltd, Hino, Tokyo 1918502, Japan

来源：

PESC 98 RECORD - 29TH ANNUAL IEEE POWER ELECTRONICS SPECIALISTS CONFERENCE, VOLS 1 AND 2 | 1998年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a new di/dt control gate drive circuit for IGBT devices is proposed. By this circuit, the switching performances of IGBT such as dv/dt,di/dt, surge voltage, and also switching losses are reduced. And it can also eliminate a snubber circuit li om the inverter system. From the experimental tests, EMI noise level is reduced more than 15dBuV/m comparing with the conventional system.

引用

页码：1443 / 1449

页数：7

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