A new di/dt control gate drive circuit for IGBTs to reduce EMI noise and switching losses

被引：0
|
作者：
Takizawa, S [1 ]
Igarashi, S [1 ]
Kuroki, K [1 ]
机构：
[1] Fuji Elect Corp Res & Dev Ltd, Hino, Tokyo 1918502, Japan
来源：
PESC 98 RECORD - 29TH ANNUAL IEEE POWER ELECTRONICS SPECIALISTS CONFERENCE, VOLS 1 AND 2 | 1998年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, a new di/dt control gate drive circuit for IGBT devices is proposed. By this circuit, the switching performances of IGBT such as dv/dt,di/dt, surge voltage, and also switching losses are reduced. And it can also eliminate a snubber circuit li om the inverter system. From the experimental tests, EMI noise level is reduced more than 15dBuV/m comparing with the conventional system.
引用
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页码：1443 / 1449
页数：7
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