The history, physics, and applications of the Smart-Cut® process

被引：87

作者：

Bruel, M ^{[1
]}

机构：

[1] CEA, LETI, Dept Microtechnol, F-38054 Grenoble, France

来源：

MRS BULLETIN | 1998年 / 23卷 / 12期

关键词：

D O I：

10.1557/S088376940002981X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

[No abstract available]

引用

页码：35 / 39

页数：5

共 20 条

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APPLIED PHYSICS LETTERS, 1998, 72 (09) :1086-1088

[2] Transfer of structured and patterned thin silicon films using the Smart-Cut(R) process [J].

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[3] Basic mechanisms involved in the Smart-Cut(R) process [J].

Aspar, B ;

Bruel, M ;

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[4]

ASPAR B, 1998, MAT RES SOC S P, V510

[5]

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Bruel, M .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1996, 108 (03) :313-319

[7] SILICON-ON-INSULATOR MATERIAL TECHNOLOGY [J].

BRUEL, M .

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[8]

Bruel M., 1994, U.S. patent, Patent No. 5374564

[9]

BRUEL M, 1993, Patent No. 2681472

[10]

CHU WK, 1976, ION IMPLANTATION SEM

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