High temperature growth of SiC and group III nitride structures in production reactors

被引：0

作者：

Schmitz, D ^{[1
]}

Beccard, R ^{[1
]}

Woelk, EG ^{[1
]}

Strauch, G ^{[1
]}

Juergensen, H ^{[1
]}

机构：

[1] AIXTRON AG, D-52072 Aachen, Germany

来源：

1998 HIGH-TEMPERATURE ELECTRONIC MATERIALS, DEVICES AND SENSORS CONFERENCE | 1998年

关键词：

GaN; SiC; MOVPE; multiwafer reactors; modeling;

D O I：

10.1109/HTEMDS.1998.730688

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We describe the use of a family of high temperature reactors to grow SiC and Nitrides. The load capacity ranges from single wafer machines to multiple wafer mass production reactors. All these reactors have a two flow injection system allowing a separated inlet of the various reactants. To achieve maximum uniformity of the growth, the Gas Foil Rotation(R) Principle is applied. The multiwafer reactors are Planetary Reactors with a double rotation of substrates. Extensive modeling has been used in order to find the optimum reactor geometries. Thus an optimization of uniformity and efficiency and a minimization of undesired parasitic reactions has been obtained.

引用

页码：132 / 135

页数：4