Density of surface states in Li doped a-Si:H

被引：0

作者：

Sinha, AK ^{[1
]}

Narayana, GS ^{[1
]}

Tripathi, SK ^{[1
]}

Agarwal, SC ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Phys, Kanpur 208016, Uttar Pradesh, India

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1998年 / 241卷 / 2-3期

关键词：

D O I：

10.1016/S0022-3093(98)00769-8

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Sub-band gap absorption measured using constant photocurrent measurement and photothermal deflection spectroscopy have been used as complementary techniques to obtain the density of surface states in lithium doped hydrogenated amorphous silicon [a-Si:H(Li)]. This method has the advantage that it obviates the need to make identical samples of varying thicknesses. We find a surface state density of approximate to 5 x 10(12) cm(-2) in a-Si:H(Li), for the two Li concentrations studied. (C) 1998 Published by Elsevier Science B.V. All rights reserved.

引用

页码：128 / 133

页数：6

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