8-bit Precision In-Memory Multiplication with Projected Phase-Change Memory

被引：0

作者：

Giannopoulos, I. ^{[1
]}

Sebastian, A. ^{[1
]}

Le Gallo, M. ^{[1
]}

Jonnalagadda, V. P. ^{[1
]}

Sousa, M. ^{[1
]}

Boon, M. N. ^{[1
]}

Eleftheriou, E. ^{[1
]}

机构：

[1] IBM Res Zurich, CH-8803 Ruschlikon, Switzerland

来源：

2018 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2018年

基金：

欧洲研究理事会;

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In-memory computing is an emerging non-von Neumann approach in which certain computational tasks such as matrix-vector multiplication are perfolined using resistive memory devices organized in a crossbar array. However, the conductance variations associated with the memory devices limit the precision of this computation. Here, we demonstrate that the so-called projected phase-change memory (Proj-PCM) devices can achieve 8-bit precision while perfouning scalar multiplication. The devices were fabricated and characterized using electrical measurements and STEM investigation. They are found to be remarkably immune to conductance variations arising from structural relaxation, 1/f noise and temperature variations. Moreover, it is possible to compensate for the temperature-dependent conductance variations in a crossbar array using a simple model. Finally, we experimentally demonstrate a neural network-based image classification task involving 30 such Proj-PCM devices.

引用

页数：4

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