Helium implanted gallium nitride evidence of gas-filled rod-shaped cavity formation along the c-axis

被引：18

作者：

Barbot, Jean-Francois ^{[1
]}

Pailloux, Frederic ^{[1
]}

David, Marie-Laure ^{[1
]}

Pizzagalli, Laurent ^{[1
]}

Oliviero, Erwan ^{[1
,2
]}

Lucas, Guillaume ^{[1
,3
]}

机构：

[1] Univ Poitiers, SP2MI, CNRS, Phys Mat Lab,UMR 6630, F-86962 Futuroscope, France

[2] Ctr Spectrometrie Nucl & Spectrometrie Masse, F-91405 Orsay, France

[3] Villigen PSI, EPFL, CRPP, Fus Technol Mat Div, CH-5232 Villigen, Switzerland

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 104卷 / 04期

关键词：

D O I：

10.1063/1.2970062

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

structural defects induced by He implantation in GaN epilayer at high fluence (1 X 10(17) He/cm(2)) and elevated temperature (750 degrees C) have been studied by conventional and high resolution transmission electron microscopy. In addition to the planar interstitial-type defects lying in the basal plane usually observed after high fluence implantation into GaN, a continuous layer of bubbles arranged in rows parallel to the implanted surface is observed in the region of maximum He concentration. This arrangement of bubbles is ascribed to interactions with dislocations. Beyond, one dimensional rod-shaped defects appear perpendicular to the implanted surface. Contrast analysis of high resolution images and atomistic simulations gives converging results in the determination of the nature and structure of these defects, i.e., gas-filled rod-shaped cavities in an overpressurized state. (c) 2008 American Institute of Physics.

引用

页数：7