Highly tunable gas sensing performance of graphene-metal contact by gate

被引：5

作者：

Bu, Xiangrui ^{[1
]}

Ma, Fa ^{[1
]}

Wu, Haiyang ^{[1
]}

Wu, Qiang ^{[1
]}

Han, Chuanyu ^{[1
]}

Wang, Xiaoli ^{[1
]}

Li, Xin ^{[1
]}

Liu, Weihua ^{[1
]}

机构：

[1] Xi An Jiao Tong Univ, Sch Microelect, Xian 710049, Peoples R China

来源：

MATERIALS LETTERS | 2020年 / 275卷

基金：

中国国家自然科学基金;

关键词：

Graphene; Gas sensors; Contact resistance; Field effect transistor; COMPOSITES; EPOXY;

D O I：

10.1016/j.matlet.2020.128132

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A highly electrically tunable gas sensing performance of graphene-metal contact resistance is reported here. The response of graphene-nickel contact resistance (R-C) is improved from 16% to 87% by switching the back-gate voltage (V-BG) from 0 to 30 V during an ammonia gas sensing test. More importantly, the transfer characteristics of R-C display a highly nonlinear performance when the channel is bias close to its charge neutron point. As a result, diverse of gas sensing behavior is observed at various V-BG, 30, 40 and 50 V for instance. The results of this work indicate that the gas sensing performance of graphene-metal contact can be significantly improved via applying a proper back-gate voltage. A highly tunable gas sensing behavior may enrich the device design strategy especially towards gas sensor arrays. (C) 2020 Elsevier B.V. All rights reserved.

引用

页数：4

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