Optical investigation of the high quality InGaN/GaN MQW by MOCVD with three layer laminar flow gas injection

被引：0

作者：

Wang, T ^{[1
]}

Sugahara, T ^{[1
]}

Sakai, S ^{[1
]}

Orton, J ^{[1
]}

机构：

[1] Univ Tokushima, Dept Elect & Elect Engn, Satellite Venture Business Lab, Tokushima 770, Japan

来源：

BLUE LASER AND LIGHT EMITTING DIODES II | 1998年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An excellent quality InGaN/GaN multiple quantum wells structure (MQW) was grown on an (0001) sapphire substrate by our specially designed MOCVD equipment. Besides the emission peak from the localized excitons, we report for the first time an emission peak from the n=1 quantized well state, when this structure is excited by an excited intensity as low as 3 W/cm(2). The temperature dependence of PL spectra were also investigated. With increasing temperature, the changes in integrated intensities of these two peak are significantly different, which is in agreement with a model of localised excitons generated by transfer from an exciton population in confined quantum well states.

引用

页码：357 / 360

页数：4

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