Atomic layer epitaxy for quantum well nitride-based devices

被引：1
|
作者：
Hite, Jennifer [1 ]
Nepal, Neeraj [2 ]
Anderson, Virginia R. [3 ]
Freitas, Jaime A. [1 ]
Mastro, Michael A. [1 ]
Eddy, Charles R., Jr. [1 ]
机构：
[1] US Naval Res Lab, Washington, DC 20375 USA
[2] Sotera Def Solut, Crofton, MD 21114 USA
[3] Amer Soc Engn Educ, Washington, DC USA
来源：
QUANTUM SENSING AND NANO ELECTRONICS AND PHOTONICS XIII | 2016年 / 9755卷
关键词：
III-nitride; atomic layer epitaxy; quantum well; THIN-FILMS; GROWTH; GAN;
D O I：
10.1117/12.2209111
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The development and characterization of nitride QW structures grown by atomic layer epitaxy (ALEp) for device applications are discussed. We have grown epitaxial thin films (4-10nm) covering the full range of binary and ternary III-N compositions by ALEp. In this work, ALEp-grown QW structures are presented. Optical characteristics are discussed. Characterization of layer interfaces and composition are critical to the development of this growth technique for quantum-based devices. Structures to study this by atom probe tomography have been created. By understanding the structure of crystalline ALEp films with nanometer-scale thickness, the unique properties of these materials can be advanced for quantum-scale applications.
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页数：6
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