Effect of fabrication conditions on the properties of indium tin oxide powders

被引：5

作者：

Wei, Xie ^{[1
]}

机构：

[1] PLA Univ Sci & Tech, Engn Inst Engineer Corps, Nanjing 210007, Peoples R China

来源：

CHINESE PHYSICS B | 2008年 / 17卷 / 07期

关键词：

tin-doped indium; sintering temperature; infrared emissivity; powder resistivity;

D O I：

10.1088/1674-1056/17/7/054

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

This paper reports that indium tin oxide (ITO) crystalline powders are prepared by coprecipitation method. Fabrication conditions mainly as sintering temperature and Sn doping content are correlated with the phase, microstructure, infrared emissivity epsilon and powder resistivity of indium tin oxides by means of x-ray diffraction, Fourier transform infrared, and transmission electron microscope. The optimum sintering temperature of 1350 degrees C and Sn doping content 6 similar to 8wt% are determined. The application of ITO in the military camouflage field is proposed.

引用

页码：2683 / 2688

页数：6

共 12 条

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