Electrically controllable magnetoresistance switching in multifunctional organic based spin-valve devices

被引：0

作者：

Prezioso, Mirko ^{[1
]}

Riminucci, Alberto ^{[1
]}

Bergenti, Ilaria ^{[1
]}

Graziosi, Patrizio ^{[1
]}

Brunel, David ^{[1
]}

Dediu, Valentin A. ^{[1
]}

机构：

[1] ISMN CNR, Ist Studio Mat Nanostrutturati, I-40129 Bologna, Italy

来源：

PROCEEDINGS OF THE 2ND EUROPEAN FUTURE TECHNOLOGIES CONFERENCE AND EXHIBITION 2011 (FET 11) | 2011年 / 7卷

关键词：

Spintronics; organic electronics; multifunctional; memory; INJECTION;

D O I：

10.1016/j.procs.2011.09.019

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

In this work a multifunctional organic spintronic device is demonstrated using Tris(8-hydroxyquinolinato) aluminium (Alq3) based vertical spin valves with manganite and cobalt electrodes. The device showed a non-volatile electrical switching with dramatic effects on the spin transport behavior. The multifunctionality is illustrated together with a phenomenological model which explains the interplay between the electrical and magnetic bistability. (C) Selection and peer-review under responsibility of FET11 conference organizers and published by Elsevier B.V.

引用

页码：283 / 285

页数：3

共 50 条

[31] Electrochemical preparation and giant magnetoresistance effect of spin-valve multilayers
Yao Su-Wei
Jiang Ying
Zhang Wei-Guo
ACTA PHYSICO-CHIMICA SINICA, 2007, 23 (04) : 493 - 498
[32] Angular dependence of giant magnetoresistance in spin-valve sandwiched structures
Xu, M
Mai, ZH
PHYSICAL REVIEW B, 1999, 60 (13): : 9224 - 9227
[33] Multilayer spin-valve CoFeP/Cu nanowires with giant magnetoresistance
Sharko, S. A.
Serokurova, A. I.
Zubar, T. I.
Trukhanov, S. V.
Tishkevich, D. I.
Samokhvalov, A. A.
Kozlovskiy, A. L.
Zdorovets, M. V.
Panina, L. V.
Fedosyuk, V. M.
Trukhanov, A. V.
JOURNAL OF ALLOYS AND COMPOUNDS, 2020, 846 (846)
[34] Quasiclassical theory of spin-valve magnetoresistance: Role of spin-flip scattering
Baksalary, OM
Barnas, J
ACTA PHYSICA POLONICA A, 1997, 91 (02) : 261 - 264
[35] Spin diffusion length and giant magnetoresistance in spin-valve tri-layers
Hashimoto, Y
Katsumoto, S
Murayama, C
Iye, Y
PHYSICA B, 2000, 284 : 1247 - 1248
[36] Origin of spin-valve magnetoresistance: Interface or bulk spin-dependent scattering?
Xu, M
Mai, ZH
Xu, HB
Gong, SK
PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 2000, 11 : 51 - 60
[37] Current-induced switching in spin-valve structures
Barnas, J.
Gmitra, M.
Misiorny, M.
Dugaev, V.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2007, 244 (07): : 2304 - 2310
[38] Observation of local magnetoresistance signals in a SiGe-based lateral spin-valve device
Yamada, Michihiro
Naito, Takahiro
Tsukahara, Makoto
Yamada, Shinya
Sawano, Kentarou
Hamaya, Kohei
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2018, 33 (11)
[39] QUANTITATIVE INTERPRETATION OF GIANT MAGNETORESISTANCE PROPERTIES OF PERMALLOY-BASED SPIN-VALVE STRUCTURES
DIENY, B
EUROPHYSICS LETTERS, 1992, 17 (03): : 261 - 267
[40] Electrically tunable lateral spin-valve transistor based on bilayer CrI3
Damiano Marian
David Soriano
Emmanuele Cannavó
Enrique G. Marin
Gianluca Fiori
npj 2D Materials and Applications, 7

← 1 2 3 4 5 →