Bulk heterojunctions based on native polythiophene

被引：100

作者：

Gevorgyan, Suren A. ^{[1
]}

Krebs, Frederik C. ^{[1
]}

机构：

[1] Tech Univ Denmark, Riso Natl Lab Sustainable Energy, DK-4000 Roskilde, Denmark

来源：

CHEMISTRY OF MATERIALS | 2008年 / 20卷 / 13期

关键词：

D O I：

10.1021/cm800431s

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Three different bulk heterojunctions were prepared by solution processing from the same precursor film. The procedure employs standard film-forining processing methods from solution whereby bulk heterojunctions of poly-(3-(2-methylhexan-2-yi)-oxy-carbonyldithiophene) (P3NIHOCT) and the fullerene derivatives [60]PCBM or [70]PCBM were prepared. The films were subjected to temperatures of 200 degrees C whereby P3MHOCT is converted to the more rigid and insoluble poly-3-carboxydithiophene (P3CT); films subjected to a temperature of 3 10 degrees C lead to decarboxylation of P3CT giving native unsubstituted polythiophene (PT). The same precursor film prepared by standard solution processing thus gave access to three chemically different bulk heterojunctions that were studied in terms of performance and stability. The device with a bulk heterojunction of PT/[70]PCBM and an active area of 3 cm(2) showed the best efficiency of 1.5% (1000 W m(-2), AM1.5G, 70 degrees C) as well as a slow decay of the performance over 500 h of continuous illumination in a nitrogen atmosphere (330 W m(-2), AM1.5G, 25 degrees C).

引用

页码：4386 / 4390

页数：5

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