Optical property modification of ZnO: Effect of 1.2 MeV Ar irradiation

被引:16
作者
Chattopadhyay, Soubhik [1 ]
Dutta, Sreetama [1 ]
Pandit, Palash [2 ]
Jana, D. [1 ]
Chattopadhyay, S. [3 ]
Sarkar, A. [4 ]
Kumar, P. [5 ]
Kanjilal, D. [5 ]
Mishra, D. K. [6 ]
Ray, S. K. [7 ]
机构
[1] Univ Calcutta, Dept Phys, 92 Acharya Prafulla Chandra Rd, Kolkata 700009, India
[2] Univ Calcutta, Dept Chem, Kolkata 700009, India
[3] Taki Govt Coll, Dept Phys, Taki 743429, India
[4] Bangabasi Morning Coll, Dept Phys, Kolkata 700009, W Bengal, India
[5] Inter Univ Accelerator Ctr, New Delhi 110067, India
[6] CSIR, Inst Minerals & Mat Technol, Dept Adv Mat Technol, Bhubaneswar 751013, Orissa, India
[7] IIT, Dept Phys & Mat Sci, Kharagpur, W Bengal, India
来源
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 2 | 2011年 / 8卷 / 02期
关键词
ZnO; defects; UV-Vis absorption; irradiation; photoluminescence;
D O I
10.1002/pssc.201000532
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report a systematic study on 1.2 MeV Ar8+ irradiated ZnO by X-ray diffraction (XRD), room temperature photoluminescence (PL) and ultraviolet-visible (UV-Vis) absorption measurements. ZnO retains its wurtzite crystal structure up to maximum fluence of 5 x 10(16) ions/cm(2). Even, the width of the XRD peaks changes little with irradiation. The UV-Vis absorption spectra of the samples, unirradiated and irradiated with lowest fluence (1 x 10(15) ions/cm(2)), are nearly same. However, the PL emission is largely quenched for this irradiated sample. Red shift of the absorption edge has been noticed for higher fluence. It has been found that red shift is due to at least two defect centers. The PL emission is recovered for 5 x 10(15) ions/cm(2) fluence. The sample colour is changed to orange and then to dark brown with increasing irradiation fluence. Huge resistivity decrease is observed for the sample irradiated with 5 x 10(15) ions/cm(2) fluence. Results altogether indicate the evolution of stable oxygen vacancies and zinc interstitials as dominant defects for high fluence irradiation. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码:512 / 515
页数:4
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