Effects of high-energy ion irradiation in bismuth thin films at low temperature

被引：0
|
作者：
Chimi, Y [1 ]
Ishikawa, N [1 ]
Iwase, A [1 ]
机构：
[1] Japan Atom Energy Res Inst, Tokai Res Estab, Dept Mat Sci, Tokai, Ibaraki 3191195, Japan
来源：
RADIATION EFFECTS AND ION-BEAM PROCESSING OF MATERIALS | 2004年 / 792卷
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中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
We have studied high-energy ion irradiation effects in bismuth by measuring the electrical resistivity at low temperature in relation to its structural change. Bismuth thin films (330-520 Angstrom thick) are irradiated below similar to10 K with energetic (150-200-MeV) heavy ions. The resistivity of the specimen is measured in situ below similar to7.2 K during the irradiation. After the irradiation, annealing behavior of the resistivity is observed up to similar to30 K. The temperature dependence of the resistivity during annealing shows an abrupt increase around 20 K, implying re-crystallization of irradiation-induced amorphous regions. We have tried to detect a superconducting transition which may take place as a result of irradiation-induced amorphization. In the range of the measuring temperature down to similar to4.9 K, resistivity decrease clue to superconducting transition has not been observed in the temperature dependence of the resistivity after 200-MeV (197) Au ion irradiation up to a fluence of 3.1x10(12) CM-2.
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页码：379 / 384
页数：6
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