Electrically driven nanopyramid green light emitting diode

被引：18

作者：

Chang, S. -P. ^{[1
,2
,3
]}

Chen, Y. -C. ^{[1
,2
]}

Huang, J. -K. ^{[1
,2
]}

Cheng, Y. -J. ^{[1
,2
,4
]}

Chang, J. -R. ^{[5
]}

Sou, K. -P. ^{[1
,2
]}

Kang, Y. -T. ^{[1
,2
]}

Yang, H. -C. ^{[3
]}

Hsu, T. -C. ^{[3
]}

Kuo, H. -C. ^{[1
,2
]}

Chang, C. -Y. ^{[5
]}

机构：

[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 300, Taiwan

[3] Epistar Co Ltd, R&D Div, Hsinchu 300, Taiwan

[4] Acad Sinica, Res Ctr Appl Sci, Taipei 11529, Taiwan

[5] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 06期

关键词：

III-V semiconductors - Semiconductor quantum wells;

D O I：

10.1063/1.3681363

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An electrically driven nanopyramid green light emitting diode (LED) was demonstrated. The nanopyramid arrays were fabricated from a GaN substrate by patterned nanopillar etch, pillar side wall passivation, and epitaxial regrowth. Multiple quantum wells were selectively grown on the facets of the nanopyramids. The fabricated LED emits green wavelength under electrical injection. The emission exhibits a less carrier density dependent wavelength shift and higher internal quantum efficiency as compared with a reference c-plane sample at the same wavelength. It shows a promising potential for using nanopyramid in high In content LED applications. (C) 2012 American Institute of Physics. [doi:10.1063/1.3681363]

引用

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