Concentration Dependent Physical Properties of Ge1-xSnx Solid Solution

被引：6

作者：

Jivani, A. R. ^{[1
]}

Jani, A. R. ^{[2
]}

机构：

[1] VP & RPTP Sci Coll, Vallabh Vidyanagar 388120, Gujarat, India

[2] Sardar Patel Univ, Dept Phys, Vallabh Vidyanagar 388120, Gujarat, India

来源：

INTERNATIONAL CONFERENCE ON ADVANCES IN CONDENSED AND NANO MATERIALS (ICACNM-2011) | 2011年 / 1393卷

关键词：

Pseudopotential Method; Solid Solution; Pseudo-Alloy Atom Model; Elastic Constants; PRESSURE;

D O I：

10.1063/1.3653635

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Our own proposed potential is used to investigate few physical properties like total energy, bulk modulus, pressure derivative of bulk modulus, elastic constants, pressure derivative of elastic constants, Poisson's ratio and Young's modulus of Ge1-xSnx solid solution with x is atomic concentration of alpha-Sn. The potential combines linear plus quadratic types of electron-ion interaction. First time screening function proposed by Sarkar et al is used to investigate the properties of the Ge-Sn solid solution system.

引用

页数：2

共 7 条

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