Investigation of the effect of different oxygen partial pressure to LaAlO3 thin film properties and resistive switching characteristics

被引：26

作者：

Liu, Kou-Chen ^{[1
]}

Tzeng, Wen-Hsien ^{[2
]}

Chang, Kow-Ming ^{[2
,3
]}

Huang, Jiun-Jie ^{[2
]}

Lee, Yun-Ju ^{[4
]}

Yeh, Ping-Hung ^{[4
]}

Chen, Pang-Shiu ^{[5
]}

Lee, Heng-Yuan ^{[6
]}

Chen, Frederick ^{[6
]}

Tsai, Ming-Jinn ^{[6
]}

机构：

[1] Chang Gung Univ, Inst Electroopt Engn, Tao Yuan 33302, Taiwan

[2] Natl Chiao Tung Univ, Dept Elect Engn, Inst Elect, Hsinchu 30010, Taiwan

[3] I Shou Univ, Dept Elect Engn, Kaohsiung 840, Taiwan

[4] Tamkang Univ, Dept Phys, Tansui 251, Taiwan

[5] Minghsin Univ Sci & Technol, Dept Mat Sci & Engn, Hsinchu 340, Taiwan

[6] Ind Technol Res Inst, Elect & Optoelect Res Lab, Hsinchu 310, Taiwan

来源：

THIN SOLID FILMS | 2011年 / 520卷 / 04期

关键词：

Lanthanum aluminate; Resistive switching; Switching memory; Oxygen partial pressure; LaAlO3; Pulsed laser deposition; GROWTH;

D O I：

10.1016/j.tsf.2011.04.205

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The pulsed laser deposition and growth of a high-k dielectric lanthanum aluminate LaAlO3 (LAO) thin film on indium tin oxide/glass substrate at different oxygen partial pressure was studied. Based on the pulsed laser deposition growth mechanism, we explain how a difference in the oxygen partial pressure influences the surface roughness, formation of an interfacial layer, and the transparent resistive switching characteristics of LAO thin films. The micro-structure and oxygen concentration difference inside LAO thin films may be the main reason for the difference in electrical and resistive switching properties. Films grown at higher oxygen partial pressure displayed more reliable resistive switching performance, due to the formation of the interfacial layer and a lower concentration of oxygen vacancies. The interfacial layer serves as a good oxygen reservoir and the involvement of more oxygen ions ensures the switching reliability. The migration of oxygen ions between the interfacial layer and the LAO film under applied bias may be the switching mechanism. (C) 2011 Elsevier B. V. All rights reserved.

引用

页码：1246 / 1250

页数：5

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