Selective growth of ZnTe on sapphire substrates using a SiO2 mask

被引：0

作者：

Nakasu, Taizo ^{[1
]}

Hattori, Shota ^{[1
]}

Sun, Wei-Che ^{[1
]}

Kobayashi, Masakazu ^{[1
,2
]}

机构：

[1] Waseda Univ, Dept Elect Engn & Biosci, Shinjuku Ku, 3-4-1 Okubo, Tokyo 1698555, Japan

[2] Waseda Univ, Kagami Mem Res Inst Mat Sci & Technol, Shinjuku Ku, 2-8-26 Nishi Waseda, Tokyo 1690051, Japan

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2016年 / 253卷 / 11期

基金：

日本学术振兴会;

关键词：

heteroepitaxy; molecular beam epitaxy; sapphire; selective growth; ZnTe; MOLECULAR-BEAM EPITAXY; M-PLANE SAPPHIRE; MBE; WELLS;

D O I：

10.1002/pssb.201600317

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

ZnTe/sapphire heterostructures have attracted attention for their suitable properties as a terahertz wave detector material. In this study, we focused on the selective growth of ZnTe on SiO2-masked sapphire substrates by molecular beam epitaxy (MBE). When ZnTe was grown at a high temperature (=350 degrees C), low growth rate (0.3mh(-1)), and low J(Te)/J(Zn) flux ratio (0.83) compared with the conventional film growth conditions, the formation of ZnTe nuclei on the SiO2 mask was avoided. The Te flux intensity significantly affected the selectivity of ZnTe growth. The selective growth of ZnTe on sapphire was revealed to be limited by the desorption of Te adatoms from the SiO2.

引用

页码：2265 / 2269

页数：5

共 31 条

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