High power continuous-wave GaSb- based superluminescent diodes as gain chips for widely tunable laser spectroscopy in the 1.95-2.45 μm wavelength range

被引：33

作者：

Vizbaras, K. ^{[1
]}

Dvinelis, E. ^{[1
]}

Simonyte, I. ^{[1
]}

Trinkunas, A. ^{[1
]}

Greibus, M. ^{[1
]}

Songaila, R. ^{[1
]}

Zukauskas, T. ^{[1
]}

Kausylas, M. ^{[1
]}

Vizbaras, A. ^{[1
]}

机构：

[1] Brolis Semicond UAB, LT-14259 Vilnius, Lithuania

来源：

APPLIED PHYSICS LETTERS | 2015年 / 107卷 / 01期

关键词：

OPERATION; ALGAASSB;

D O I：

10.1063/1.4926367

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present high-power single-spatial mode electrically pumped GaSb-based superluminescent diodes (SLDs) operating in the 1.95 to 2.45 mu m wavelength range in continuous-wave (CW). MBE grown GaSb-based heterostructures were fabricated into single-angled facet ridge-waveguide devices that demonstrate more than 40 mW CW output power at 2.05 mu m, to > 5 mW at 2.40 mu m at room-temperature. We integrated these SLDs into an external cavity (Littrow configuration) as gain chips and achieved single-mode CW lasing with maximum output powers exceeding 18 mW. An extremely wide tuning range of 120 nm per chip with side-mode-suppression-ratios > 25 dB was demonstrated while maintaining optical output power level above 3 mW across the entire tuning range. (C) 2015 AIP Publishing LLC.

引用

页数：4

共 14 条

[1] BAND-GAPS AND REFRACTIVE-INDEXES OF ALGAASSB, GAINASSB, AND INPASSB - KEY PROPERTIES FOR A VARIETY OF THE 2-4-MU-M OPTOELECTRONIC DEVICE APPLICATIONS [J].