Spatially localized current-induced crystallization of amorphous silicon films

被引:8
作者
Rezek, B. [1 ]
Sipek, E. [1 ]
Ledinsky, M. [1 ]
Krejza, P. [1 ]
Stuchlik, J. [1 ]
Fejfar, A. [1 ]
Kocka, J. [1 ]
机构
[1] Acad Sci Czech Republic, Inst Phys, Prague 16253, Czech Republic
关键词
silicon; crystallization; atomic force and scanning tunneling microscopy; nanocrystals;
D O I
10.1016/j.jnoncrysol.2007.10.045
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Field-enhanced metal-induced solid phase crystallization (FE-MISPC) at room temperature is employed to create microscopic crystalline regions at predefined positions in hydrogen-rich amorphous silicon (a-Si:H) films. Electric field is applied locally using a sharp conductive tip in atomic force microscope (AFM) and nickel electrode below the a-Si:H film. The process is driven by a constant current of -50 pA to -500 pA while controlling the amount of transferred energy (1-300 nJ) as a function of time. Passing current leads to a formation of nanoscale pits in the a-Si:H films. Depending on the energy amount and rate the pits exhibit lower or orders of magnitude higher conductivity as detected by current-sensing AFM. High conductivity is attributed to a local crystallization of the films. This is confirmed by micro-Raman spectroscopy. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:2305 / 2309
页数:5
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