Spatially localized current-induced crystallization of amorphous silicon films

被引：8

作者：

Rezek, B. ^{[1
]}

Sipek, E. ^{[1
]}

Ledinsky, M. ^{[1
]}

Krejza, P. ^{[1
]}

Stuchlik, J. ^{[1
]}

Fejfar, A. ^{[1
]}

Kocka, J. ^{[1
]}

机构：

[1] Acad Sci Czech Republic, Inst Phys, Prague 16253, Czech Republic

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2008年 / 354卷 / 19-25期

关键词：

silicon; crystallization; atomic force and scanning tunneling microscopy; nanocrystals;

D O I：

10.1016/j.jnoncrysol.2007.10.045

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Field-enhanced metal-induced solid phase crystallization (FE-MISPC) at room temperature is employed to create microscopic crystalline regions at predefined positions in hydrogen-rich amorphous silicon (a-Si:H) films. Electric field is applied locally using a sharp conductive tip in atomic force microscope (AFM) and nickel electrode below the a-Si:H film. The process is driven by a constant current of -50 pA to -500 pA while controlling the amount of transferred energy (1-300 nJ) as a function of time. Passing current leads to a formation of nanoscale pits in the a-Si:H films. Depending on the energy amount and rate the pits exhibit lower or orders of magnitude higher conductivity as detected by current-sensing AFM. High conductivity is attributed to a local crystallization of the films. This is confirmed by micro-Raman spectroscopy. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：2305 / 2309

页数：5

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