Nonlinear spin Hall effect in GaAs (110) quantum wells

被引：4

作者：

Ivanov, V. I. ^{[1
]}

Dugaev, V. K. ^{[2
,3
,4
]}

Sherman, E. Ya. ^{[5
,6
]}

Barnas, J. ^{[7
,8
]}

机构：

[1] Ukrainian Acad Sci, Inst Problems Mat Sci, UA-58001 Chernovtsy, Ukraine

[2] Rzeszow Univ Technol, Dept Phys, PL-35959 Rzeszow, Poland

[3] Univ Tecn Lisboa, Inst Super Tecn, Dept Phys, P-1049001 Lisbon, Portugal

[4] Univ Tecn Lisboa, Inst Super Tecn, CFIF, P-1049001 Lisbon, Portugal

[5] Univ Basque Country, Dept Phys Chem, E-48080 Bilbao, Spain

[6] IKERBASQUE Basque Fdn Sci, Bilbao 48011, Spain

[7] Polish Acad Sci, Inst Mol Phys, PL-60179 Poznan, Poland

[8] Adam Mickiewicz Univ, Fac Phys, PL-61614 Poznan, Poland

来源：

PHYSICAL REVIEW B | 2011年 / 84卷 / 08期

关键词：

RELAXATION;

D O I：

10.1103/PhysRevB.84.085326

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We consider a stationary spin current in a (110)-oriented GaAs-based symmetric quantum well due to a nonlinear response to an external periodic electric field. The model assumed includes the Dresselhaus spin-orbit interaction and the random Rashba spin-orbit coupling. The Dresselhaus term is uniform in the quantum well plane and gives rise to spin splitting of the electron band. The external electric field of frequency omega-in the presence of random Rashba coupling-leads to virtual spin-flip transitions between spin subbands, generating a stationary pure spin current proportional to the square of the field amplitude.

引用

页数：5

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