p-i-n Homojunction in Organic Light-Emitting Transistors

被引：74
|
作者：
Bisri, Satria Zulkarnaen [1 ]
Takenobu, Taishi [2 ,3 ]
Sawabe, Kosuke [1 ]
Tsuda, Satoshi [1 ]
Yomogidao, Yohei [1 ]
Yamao, Takeshi [4 ]
Hotta, Shu [4 ]
Adachi, Chihaya [5 ]
Iwasa, Yoshihiro [6 ,7 ,8 ,9 ]
机构：
[1] Tohoku Univ, Grad Sch Sci, Dept Phys, Sendai, Miyagi 9808578, Japan
[2] Waseda Univ, Dept Appl Phys, Tokyo, Japan
[3] Japan Sci & Technol Agcy, PRESTO, Kawaguchi, Saitama 3320012, Japan
[4] Kyoto Inst Technol, Dept Macromol Sci & Engn, Kyoto 6068585, Japan
[5] Kyushu Univ, Ctr Future Chem, Fukuoka 8190395, Japan
[6] Univ Tokyo, Quantum Phase Elect Ctr, Tokyo 1138656, Japan
[7] Univ Tokyo, Dept Appl Phys, Tokyo 1138656, Japan
[8] RIKEN, Adv Sci Inst, CERG, Wako, Saitama 3510198, Japan
[9] Japan Sci & Technol Corp, CREST, Kawaguchi, Saitama 3320012, Japan
来源：
ADVANCED MATERIALS | 2011年 / 23卷 / 24期
关键词：
RECOMBINATION ZONE; EXCITON DIFFUSION; AMBIPOLAR; MOBILITY;
D O I：
10.1002/adma.201004572
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
A new method for investigating light-emitting property in organic devices is demonstrated. We apply the ambipolar light-emitting transistors (LETS) to directly observe the recombination zone, and find a strong link between the transistor performance and the zone size. This finding unambiguously indicates that the light emission comes from the electric-field-induced p-i-n homojunction in ambipolar LETs.
引用
收藏
页码：2753 / 2758
页数：6
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