Influence of strain relaxation on the optical properties of InGaN/GaN multiple quantum well nanorods

被引:85
作者
Wang, Q. [1 ]
Bai, J. [1 ]
Gong, Y. P. [1 ]
Wang, T. [1 ]
机构
[1] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England
基金
英国工程与自然科学研究理事会;
关键词
A-PLANE GAN; RECIPROCAL SPACE; ORIGIN;
D O I
10.1088/0022-3727/44/39/395102
中图分类号
O59 [应用物理学];
学科分类号
摘要
Optical investigation has been carried out on InGaN/GaN nanorod structures with different indium compositions, fabricated from InGaN/GaN multiple quantum well (MQW) epitaxial wafers using a self-organized nickel nano-mask and subsequent dry etching techniques. In comparison with the as-grown InGaN/GaN MQWs, the internal quantum efficiencies of the nanorods are significantly improved, in particular, for the green InGaN/GaN nanorods with a high indium composition, the internal quantum efficiency is enhanced by a factor of 8, much larger than the enhancement factor of 3.4 for the blue InGaN/GaN nanorods. X-ray reciprocal space mapping (RSM) measurements have been performed in order to quantitatively evaluate the stain relaxation in the nanorods, demonstrating that the majority of strain in InGaN/GaN MQWs can be relaxed as a result of fabrication into nanorods. The excitation-power-dependent photoluminescence measurements have also clearly shown that a significant reduction in the strain-induced quantum confined stark effect has occurred to the nanorod structures.
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页数:6
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