Polarization-doped quantum wells with graded Al-composition for highly efficient deep ultraviolet light-emitting diodes

被引：14

作者：

Du, Peng ^{[1
]}

Shi, Lang ^{[1
]}

Liu, Sheng ^{[2
]}

Zhou, Shengjun ^{[1
,2
]}

机构：

[1] Wuhan Univ, Ctr Photon & Semicond, Sch Power & Mech Engn, Wuhan 430072, Peoples R China

[2] Wuhan Univ, Res Ctr Elect Mfg & Packaging Integrat, Inst Technol Sci, Wuhan 430072, Peoples R China

来源：

MICRO AND NANOSTRUCTURES | 2022年 / 163卷

基金：

中国国家自然科学基金;

关键词：

DUV-LEDs; Graded Al-composition; V-shaped QWs; Quantum efficiency; Carrier transport; PERFORMANCE; IMPROVEMENT; PARAMETERS;

D O I：

10.1016/j.spmi.2022.107150

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The efficiency performance of AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) suffers from the strong polarization effect in multiple quantum wells (MQWs). Here, we propose V-shaped QWs to improve the quantum efficiency of DUV LEDs. We numerically investigated the effect of QWs with graded Al-composition on the device performance of DUV LEDs. Simulation results show that the QWs with graded Al-composition can mitigate the detrimental factors of traditional QWs with flat Al-composition, such as tilted energy band and separation of carrier wave function. Furthermore, compared to the QWs with linearly decreased or increased Al-composition along the growth direction, the V-shaped QWs can simultaneously alleviate the slope of valance and conduction band and obtain the better carrier confinement ability. Therefore, the DUV LED with V-shaped QWs exhibits a better optical performance.

引用

页数：8

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