Laser devices by selective-area epitaxy

被引：0
|
作者：
Lammert, RM
Coleman, JJ
机构：
来源：
OPTOELECTRONIC INTEGRATED CIRCUITS | 1997年 / 3006卷
关键词：
semiconductor lasers; selective-area epitaxy; monolithic integration; low-threshold; wavelength division multiplexing; nonabsorbing mirrors;
D O I：
10.1117/12.264213
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The design and operation of strained-laser InGaAs-GaAs laser sources fabricated by selective-area epitaxy (SAE) are presented, These devices include lasers with low threshold currents, lasers with nonabsorbing miners, and dual channel sources, The low threshold lasers have threshold currents as low as 2.65 mA for an uncoated device and 0,97 mA for a coated device. The lasers with nonabsorbing mirrors exhibited optical powers up to similar to 325 mW/facet (4 mu m wide output aperture), which is a > 40% increase over conventional SAE lasers. The dual channel source is capable of coupling two discrete optical sources into a single mode fiber without the need for an external coupler.
引用
收藏
页码：2 / 14
页数：13
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