Residual stress in lead titanate thin film on different substrates

被引：24

作者：

Ohno, T

Fu, DS

Suzuki, H

Miyazaki, H

Ishikawa, K

机构：

[1] Shizuoka Univ, Dept Mat Sci, Hamamatsu, Shizuoka 4328561, Japan

[2] Tohoku Univ, Mat Res Inst, Aoba Ku, Sendai, Miyagi 9808577, Japan

[3] Yokkaichi Univ, Fac Policy Management, Yokaichi 5128512, Japan

来源：

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY | 2004年 / 24卷 / 06期

关键词：

capacitors; dielectric properties; perovskites; residual stress; sol-gel process;

D O I：

10.1016/S0955-2219(03)00454-0

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This paper describes the effect of thermal expansion coefficients of the substrates on the residual stress in lead titanate (PT) thin film. The residual stress in the film on the different substrates was calculated from the phonon mode shift. In addition, the dielectric constant for the film was calculated from the lattice mode frequency. As a result, the residual stress and the dielectric behavior depended upon the substrates. (C) 2003 Elsevier Ltd. All rights reserved.

引用

页码：1669 / 1672

页数：4

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