Characterization of the optical nonlinearities of ZnSe using Z-scan techniques

被引：0

作者：

Boulanger, M ^{[1
]}

Villeneuve, A ^{[1
]}

Piché, M ^{[1
]}

机构：

[1] Univ Laval, Dept Phys, Equipe Laser & Opt Guidee, Ctr Opt Photon & Laser, Quebec City, PQ G1K 7P4, Canada

来源：

ADVANCES IN OPTICAL BEAM CHARACTERIZATION AND MEASUREMENTS | 1998年 / 3418卷

关键词：

Z-scan; semiconductor; nonlinearity measurement; ZnSe; third-order; fifth-order; self-imaging;

D O I：

10.1117/12.326646

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report on the measurements of the nonlinear susceptibility of ZnSe at 783 nm with 110 fs pulses of various intensities. We point out limitations for the measurement of chi((5)) nonlinear susceptibility using Z-scan technique. We also present a new technique using self-imaging (SIZ-scan) which could provide more sensitive measurements of nonlinear refractive effects.

引用

页码：11 / 18

页数：8

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