Hydrogen sensing performance of Pt-oxide-GaN schottky diode

被引：2

作者：

Tsai, Y. -Y. ^{[1
]}

Lin, K. -W ^{[2
]}

Chen, H. I. ^{[3
]}

Hung, C. -W ^{[1
]}

Chen, T. -P. ^{[1
]}

Liu, W-C. ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan

[2] Chien Kuo Technol Univ, Dept Elect Engn, Changhu 500, Taiwan

[3] Natl Cheng Kung Univ, Dept Chem Engn, Tainan 70101, Taiwan

来源：

ELECTRONICS LETTERS | 2007年 / 43卷 / 22期

关键词：

D O I：

10.1049/el:20072041

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An interesting Pt-oxide-GaN MOS-type Schottky diode hydrogen sensor with high-sensitivity hydrogen detection over a wide operating temperature regime is demonstrated. Experimentally, a voltage shift of 264.4 mV at a forward current of 1 mA is obtained under 5040 ppm H-2/air gas. Also, a large current variation of 0.89 mA in magnitude between air and 5040 ppm H-2/air gas is observed under a forward voltage of 0.2 V Under an inert environment (N-2), a so-called Temkin isotherm can be used to interpret the hydrogen adsorption behaviour at the Pt-oxide interface.

引用

页码：1192 / 1194

页数：3

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