Hydrogen sensing performance of Pt-oxide-GaN schottky diode

被引：2
作者：
Tsai, Y. -Y. [1 ]
Lin, K. -W [2 ]
Chen, H. I. [3 ]
Hung, C. -W [1 ]
Chen, T. -P. [1 ]
Liu, W-C. [1 ]
机构：
[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan
[2] Chien Kuo Technol Univ, Dept Elect Engn, Changhu 500, Taiwan
[3] Natl Cheng Kung Univ, Dept Chem Engn, Tainan 70101, Taiwan
来源：
ELECTRONICS LETTERS | 2007年 / 43卷 / 22期
关键词：
D O I：
10.1049/el:20072041
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An interesting Pt-oxide-GaN MOS-type Schottky diode hydrogen sensor with high-sensitivity hydrogen detection over a wide operating temperature regime is demonstrated. Experimentally, a voltage shift of 264.4 mV at a forward current of 1 mA is obtained under 5040 ppm H-2/air gas. Also, a large current variation of 0.89 mA in magnitude between air and 5040 ppm H-2/air gas is observed under a forward voltage of 0.2 V Under an inert environment (N-2), a so-called Temkin isotherm can be used to interpret the hydrogen adsorption behaviour at the Pt-oxide interface.
引用
收藏
页码：1192 / 1194
页数：3
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