Hydrogen sensing performance of Pt-oxide-GaN schottky diode

被引：2
作者：
Tsai, Y. -Y. [1 ]
Lin, K. -W [2 ]
Chen, H. I. [3 ]
Hung, C. -W [1 ]
Chen, T. -P. [1 ]
Liu, W-C. [1 ]
机构：
[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan
[2] Chien Kuo Technol Univ, Dept Elect Engn, Changhu 500, Taiwan
[3] Natl Cheng Kung Univ, Dept Chem Engn, Tainan 70101, Taiwan
来源：
ELECTRONICS LETTERS | 2007年 / 43卷 / 22期
关键词：
D O I：
10.1049/el:20072041
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An interesting Pt-oxide-GaN MOS-type Schottky diode hydrogen sensor with high-sensitivity hydrogen detection over a wide operating temperature regime is demonstrated. Experimentally, a voltage shift of 264.4 mV at a forward current of 1 mA is obtained under 5040 ppm H-2/air gas. Also, a large current variation of 0.89 mA in magnitude between air and 5040 ppm H-2/air gas is observed under a forward voltage of 0.2 V Under an inert environment (N-2), a so-called Temkin isotherm can be used to interpret the hydrogen adsorption behaviour at the Pt-oxide interface.
引用
收藏
页码：1192 / 1194
页数：3
相关论文
共 50 条
[21]   Hydrogen sensing characteristics of a Pt-oxide-Al0.3Ga0.7As MOS Schottky diode [J].
Cheng, CC ;
Tsai, YY ;
Lin, KW ;
Chen, HI ;
Lu, CT ;
Liu, WC .
SENSORS AND ACTUATORS B-CHEMICAL, 2004, 99 (2-3) :425-430
[22]   Hydrogen sensors based on Pt-AlGN/AIN/GaN Schottky diode [J].
Wang, Xinhua ;
Wan, Xiaoliang ;
Xiao, Hongling ;
Feng, Chun ;
Way, Baozhu ;
Yang, Cuibai ;
Wang, Junxi ;
Wang, Ciomei ;
Ran, Junxue ;
Hu, Guoxin ;
Li, Jinmin .
ADVANCED MATERIALS AND DEVICES FOR SENSING AND IMAGING III, 2008, 6829
[23]   Hydrogen sensing performance of a Pd/HfO2/GaOx/GaN based metal-oxide-semiconductor type Schottky diode [J].
Chang, Ching-Hong ;
Lin, Kun-Wei ;
Lu, Hsin-Hau ;
Liu, Rong-Chau ;
Liu, Wen-Chau .
INTERNATIONAL JOURNAL OF HYDROGEN ENERGY, 2018, 43 (42) :19816-19824
[24]   Improved hydrogen-sensing performance of a Pd/GaN Schottky diode with a surface plasma treatment approach [J].
Chen, Tai-You ;
Chen, Huey-Ing ;
Huang, Chien-Chang ;
Hsu, Chi-Shiang ;
Chiu, Po-Shun ;
Chou, Po-Cheng ;
Liu, Wen-Chau .
SENSORS AND ACTUATORS B-CHEMICAL, 2011, 159 (01) :159-162
[25]   PERFORMANCE COMPARISON OF InP AND AlGaN/GaN SCHOTTKY DIODE HYDROGEN SENSORS [J].
Akazawa, Masamichi ;
Hasegawa, Hideki .
2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM), 2008, :473-476
[26]   Characteristics of a new Pt/oxide/In0.49Ga0.51P hydrogen-sensing Schottky diode [J].
Lin, KW ;
Chen, HI ;
Cheng, CC ;
Chuang, HM ;
Lu, CT ;
Liu, WC .
SENSORS AND ACTUATORS B-CHEMICAL, 2003, 94 (02) :145-151
[27]   Ammonia Sensing Performance of a GaN-Based Semiconductor Diode with a Solution-Processed Pt/GaOx Schottky Contact [J].
Liu, I-Ping ;
Chang, Ching-Hong ;
Ke, Bu-Yuan .
ACS APPLIED ELECTRONIC MATERIALS, 2019, 1 (08) :1474-1481
[28]   A new Pt-oxide-InAlP-based Schottky diode hydrogen sensor [J].
Yan-Ying-Tsai ;
Cheng, Shiou-Ying ;
Tsai, Jung-Hui ;
Guo, Der-Feng ;
Chen, Huey-Ing ;
Liu, Wen-Chau .
TRANSDUCERS '07 & EUROSENSORS XXI, DIGEST OF TECHNICAL PAPERS, VOLS 1 AND 2, 2007,
[29]   Sensing dynamics and mechanism of a Pd/AlGaN/GaN Schottky diode type hydrogen sensor [J].
Akazawa, Masamichi ;
Hasegawa, Hideki .
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007, 2007, 4 (07) :2629-+
[30]   Hydrogen sensing characteristics of porous Pd/SiO2/GaN schottky diode [J].
Chen, Yu-Jen ;
Chou, Yen-, I ;
Wu, Chung-Yeh ;
Lin, Shih-Da ;
Huang, Yu-Wei ;
Chen, Huey-Ing .
EDSSC: 2007 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS, VOLS 1 AND 2, PROCEEDINGS, 2007, :793-+
12345