Terahertz emission from phosphor Centers in SiGe and SiGe/Si semiconductors

被引：0

作者：

Paylov, S. G. ^{[1
]}

Huebers, H. M. ^{[1
]}

Abrosimov, N. V. ^{[2
]}

Riernann, H. ^{[2
]}

Radarnson, H. H. ^{[3
]}

Bekin, N. A. ^{[4
]}

Yablonsky, A. N. ^{[4
]}

Zhukavin, R. Kh. ^{[4
]}

Drozdov, Yu. N. ^{[4
]}

Shastin, V. N. ^{[4
]}

机构：

[1] German Aerosp Ctr DLR, Inst Planetary Res, D-12489 Berlin, Germany

[2] Inst Crystal Growth, D-12489 Berlin, Germany

[3] Royal Inst Technol KTH, Kista 16640, Sweden

[4] Russian Acad Sci, Inst Phys Microstruct, Moscow 603950, Russia

来源：

GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XII | 2008年 / 131-133卷

基金：

俄罗斯基础研究基金会;

关键词：

silicon-germanium; terahertz emission;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Terahertz-range photo luminescence from silicon-germanium crystals and superlattices doped by phosphor has been studied under optical excitation by radiation from a mid-infrared CO2 laser at low temperature. SiGe crystals with a Ge content between 0.9 and 6.5 %, doped by phosphor with a concentration optimal for silicon laser operation, do not exhibit terahertz gain. On the contrary, terahertz-range gain of similar to 2.3 - 3.2 cm(-1) has been observed for donor-related optical transitions in Si/SiGe strained superlattices at pump intensities above 100 kW/cm(2).

引用

页码：613 / +

页数：3

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